page . 1 october 29,2010-rev.02 2n7002k-au 60v n-channel enhancement mode mosfet - esd protected maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) note: 1. maximum dc current limited by the package 2. surface mounted on fr4 board, t < 5 sec pan jit reserves the right to improve product design,functions and reliability without notice parameter symbol limit units drain-source voltage v ds 60 v gate-source voltage v gs + 20 v continuous drain current i d 300 ma pulsed drain current 1) i dm 2000 ma maximum power dissipation t a =25 o c t a =75 o c p d 350 210 mw operating junction and storage temperature range t j ,t stg -55 to + 150 o c junction-to ambient thermal resistance(pcb mounted) 2 r ja 357 o c/w mechanical ? case: sot-23 package ? terminals : solderable per mil-std-750,method 2026 ? apporx. weight: 0.0003 ounce s , 0.0084 grams ? marking : k72 data sot-23 unit inch(mm) 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.008(0.20) 0.003(0.08) 0.004(0.10) 0.000(0.00) features ? r ds(on) , v gs @10v,i ds @500ma=3 ? r ds(on) , v gs @4.5v,i ds @200ma=4 ? advanced trench process technology ? high density cell design for ultra low on-resistance ? very low leakage current in off condition ? specially designed for battery operated systems, solid-state relays drivers : relays, displays, lamps, solenoids, memories, etc. ? esd protected 2kv hbm ? acqire quality system certificate : ts16949 ? aec-q101 qualified ? lead free in comply with eu rohs 2002/95/ec directives. ? green molding compound as per iec61249 std. . (halogen free)
page . 2 october 29,2010-rev.0 2 electrical characteristics v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v , i d =10 a60--v gate threshold voltage v gs(th) v ds =v gs , i d =250 a1-2.5v drain-source on-state resistance r ds(on) v gs =4.5v , i d =200ma - - 4 .0 drain-source on-state resistance r ds(on) v gs =10v , i d =500ma - - 3.0 zero gate voltage drain current i dss v ds =60v , v gs = 0 v --1 a gate body leakage i gss v gs =+ 20v , v ds =0v - - + 10 a forward transconductance g fs v ds =15v , i d =250ma 100 - - ms dynamic total gate charge q g v ds =15v, i d =200ma v gs =5v --0.8nc tur n-on ti me t on v dd =30v , r l =150 i d =200ma , v gen =10v r g =10 --20 ns tur n-off ti me t off --4 0 input capacitance c iss v ds =25v , v gs =0v f=1.0mh z --3 5 pf output capacitance c oss --1 0 reverse transfer capacitance c rss --5 source-drain diode diode forward voltage v sd i s =200ma , v gs =0v - 0.82 1.3 v continuous diode forward current i s - - - 300 m a pulse diode forward current i sm - - - 2000 m a 2n7002k-au
page . 3 october 29,2010-rev.0 2 fig. 1-typical forward characteristic fig.1- output characteristic typical characteristics curves (t =25 c,unless otherwise noted) a o fig.2- transfer characteristic fig.3- on resistance vs drain current fig.4- on resistance vs gate to source voltage fig.5- on resistance vs junction temperature v ds - drain-to-source voltage (v) i d - drain - to - source current ( a ) v gs - gate-to-source voltage (v) i d - drain source current ( a ) i d - drain current (a) r ds ( on ) - on - resistance () v gs - gate-to-source voltage (v) r ds(on) - on-resistance () t j - junction temperature ( o c) r ds(on) - on-resistance(normalized) 0 0.2 0.4 0.6 0.8 1 1.2 012345 v gs = 6.0~10v 5.0v 4.0v 3.0v 0 0.2 0.4 0.6 0.8 1 1.2 0123456 v ds =10v 25 o c 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 v gs =4.5v v gs =10v 0 1 2 3 4 5 2345678910 i d =200ma i d =500ma 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v gs =10v i d =500ma 2n7002k-au
page . 4 october 29,2010-rev.0 2 fig.6 - gate charge waveform fig.8 - threshold voltage vs temperature fig.7 - gate charge fig.9 - breakdown voltage vs junction temperature fig.10 - source-drain diode forward voltage qgd qgs qg qsw vgs(th) vgs qg qg(th) q g - gate charge (nc) v gs - gate-to-source voltage (v) t j - junction temperature ( c) v th - g-s threshold voltage (normalized) t j - junction temperature ( o c) bv dss - breakdown voltage (v) v sd - source-to-drain voltage (v) i s - source current (a) fig.11 - capacitance vs drain to source voltage v ds - drain-to-source voltage (v) c - capacitance (pf) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 v ds= 10v i d =250ma 72 74 76 78 80 82 84 86 88 -50 -25 0 25 50 75 100 125 150 id = 250 a 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 i d =250 a 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v gs =0v 25 o c -55 o c t j =125 o c 0 10 20 30 40 50 60 70 0 5 10 15 20 25 ciss f=1mhz v gs =0v crss coss 2n7002k-au
page . 5 october 29,2010-rev.02 mounting pad layout l ? packing information t/r - 12k per 13" plastic ree t/r - 3k per 7 plastic reel order information sot-23 0.031 min. (0.80) min. 0.037 (0.95) 0.043 (1.10) 0.078 (2.00) 0.035 min. (0.90) min. 0.043 (1.10) 0.106 (2.70) unit inch(mm) 2n7002k-au
page . 6 october 29,2010-rev.02 part no_packing code_version 2n7002k-au _r1_000 a 1 fo r example : rb500v-40 _ r2 _ 00001 2n7002k-au _r2_000 a 1 part no. serial number version code means hf packing size code means 13" packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code tape and ammunition box (t/b) a n/a 0 hf 0 serial number tape and reel (t/r) r 7" 1 rohs 1 serial number bulk packing (b/p) b 13" 2 tube packing (t/p) t 26mm x tape and reel (right oriented) (trr) s 52mm y tape and reel (left oriented) (trl) l panasert t/b cathode up (pbcu) u forming f panasert t/b cathode down (pbcd) d 2n7002-au
page . 7 disclaimer ? reproducing and modifying information of the document is prohibited without permission from panjit international inc.. ? panjit international inc. reserves the rights to make changes of the content herein the document anytime without notification. please refer to our website for the latest document. panjit international inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. ? panjit international inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. ? applications shown on the herein document are examples of standard use and operation. customers are responsible in comprehending the suitable use in particular applications. panjit international inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ? the products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify panjit international inc. for any damages resulting from such improper use or sale. ? ? since panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. 2n7002k-au october 29,2010-rev.02
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